Multi X Office
Jeffrey Daulton, Ph.D., is a program manager in the Multi X Office (MXO). He joined DARPA in May 2026.
He is interested in pursuing paradigm-disrupting technologies that use approaches underpinned by physics, chemistry, AI/ML, and advanced processing to break the typical trade space in design of advanced microelectronics and materials.
Prior to joining DARPA, Daulton was a staff member at MIT Lincoln Laboratory. During this time, he invented approaches for atomic layer etching (ALE) of wide bandgap semiconductors and applied these to the fabrication of advanced heterostructure devices and preparation of atomically-smooth diamond surfaces. Across industry and research roles, he has contributed to the advancement of multiple semiconductor technology platforms as an individual contributor and team lead, including GaAs epitaxy, SiC and GaN RF and power transistors, and SiGe tunneling devices.
His Ph.D. work at Brown University resulted in world record current density, transconductance, and gain in group III-nitride hot electron transistors.
Education
- Ph.D., Electrical Engineering, Brown University
- Sc.M., Electrical Engineering, Brown University
- B.S., Electrical Engineering, The Ohio State University