Summary
Ultra-wide band gap (UWBG) materials, such as diamond (C), cubic boron nitride (c-BN) and aluminum nitride (AlN), have the potential to revolutionize traditional silicon (Si) semiconductor electronics due to their unique characteristics. These include exceptional breakdown strength, efficient current transport, high thermal conductivity, and large optical bandgap.
UWBG materials are poised to impact both defense and commercial applications, including high-power radio frequency switches and limiters, high-voltage switches for power electronics, extreme-environment electronics and sensors, and deep ultraviolet LEDs and lasers. However, challenges such as poor material quality and unreliable electrical contacts currently limit their performance.
The Ultra-Wide Band Gap Semiconductors (UWBGS) program aims to address these obstacles by developing the foundational, high-quality materials and electrical contacts needed for practical UWBG electronics and applications.
The program will primarily focus on developing high-quality, large area (100mm) UWBG substrates; building UWBG device layers with high doping efficiency and homo- and hetero-junctions; and ultra-low resistance electrical contacts.