Defense Advanced Research Projects AgencyTagged Content List

Design Methods

Mathematical and computational methods for physical and mechanical system design

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The DARPA Nitride Electronics NeXt-Generation Technology (NEXT) program had the goal of developing a revolutionary GaN transistor technology to simultaneously achieve high-speed and large voltage swing. The expected outcome of the program was that highly-scaled GaN devices would ultimately benefit the design of efficient millimeter wave power amplifiers and mixed-signal circuits. The NEXT program was successful in developing GaN transistors with deeply scaled gate lengths along with modifications to the heteroepitaxial channel material, ohmic contacts, and overall gate structure, resulting in record performance for GaN devices.