Defense Advanced Research Projects AgencyTagged Content List

Information Microsystems

Relating to computer and other digital electronic systems

Showing 78 results for Microsystems RSS
Modern networks and platforms rely on access to the radio frequency (RF) spectrum for communications, radar sensing, command and control, time transfer, and geo-location. Electromagnetic interference, due to congestion in the spectrum or malicious jamming, can have catastrophic effects. Countering such interference is particularly important for unmanned platforms. To address this challenge, the Hyper-wideband Enabled RF Messaging (HERMES) program seeks to provide an assured link for essential communications by developing a jammer- countering capability that is orders of magnitude beyond the state-of-the-art.
The increased density of components in today’s electronics has pushed heat generation and power dissipation to unprecedented levels. Current thermal management solutions, usually involving remote cooling, where heat must be conducted away from components before rejection to the air, are unable to limit the temperature rise of today’s complex electronic components without adding considerable weight and volume to electronic systems. The result is complex military systems that continue to grow in size and weight due to the inefficiencies of existing thermal management hardware.
The Mesodynamic Architectures (Meso) program seeks to address future Defense needs by exploiting unique characteristics of matter and energy emerging at small spatial and short temporal scales including new states of matter, untapped forces, novel relationships between fields and excitations and the importance of noise and nonlinearity. The parallel goals of the Meso program are to provide DoD with unrivaled communication, sensing, and computation by exploiting mesoscale characteristics, while establishing well-defined problems to accelerate the transition to quantum engineering.
Many defense electronics are susceptible to radiation and high temperatures. Developing electronics that can withstand harsh conditions would expand the types of environments in which DoD electronics may be used.
High performance analog, RF and mixed-signal electronics usually require transistors with cutoff frequencies greater than 200 GHz. Current transistor technologies in silicon (i.e., complementary metal oxide semiconductor and silicon-germanium heterojunction bipolar transistor) can achieve such transistor speed, but only with unacceptably small voltage swing and breakdown voltage, severely inhibiting performance. These constraints limit the development of crucial military electronics including high-speed power amplifiers, ultra-linear mixers and high-output power digital-to-analog converters.