Dr. Daniel Green joined DARPA as a program manager in March 2013. His interests include advanced materials, devices and technology integration for electronic systems.
Prior to DARPA, Dr. Green was at the Office of Naval Research (ONR), where he managed both fundamental and applied research programs in the areas of electronic materials and devices focusing on advanced III-V semiconductors including wide bandgap materials, magnetic and magneto electric devices and oxide materials.
From 2003 to 2009, Dr. Green served as a materials/device engineer and program manager at RF Micro Devices, Inc. where he developed Gallium Nitride (GaN) transistor technology for amplifier applications in both the commercial and defense markets. He had hands on involvement in the technology development from the materials growth to the initial one-million-hour reliability assessment, which led to the commercial release of the GaN process.
Dr. Green received his Bachelor of Science in Physics and Electrical Engineering from Yale University. He completed his Master of Science and Doctor of Philosophy work at the University of California, Santa Barbara studying GaN materials and device technology.
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