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Dr. John Albrecht Program Manager
Dr. John D. Albrecht joined the Defense Advanced Research Projects Agency in May 2009. He received his B.S. (1993), M.S. (1995) and Ph.D (1999) degrees in Electrical Engineering from the University of Minnesota where he studied carrier interactions in wide-bandgap semiconductors under high electric field device conditions. Dr. Albrecht came to DARPA from the Air Force Research Laboratory's Sensors Directorate (AFRL/RY) at Wright-Patterson AFB, where he has been a member of the Exploratory Electronics Branch. From 1999 to 2001, he was an NRC Postdoctoral Associate at Naval Research Laboratory in Washington, DC, where he performed basic research on electron and phonon transport in semiconductor materials and at interfaces as well as in thermoelectric structures. From 2001-2002, he was a postdoctoral researcher with the Condensed Matter and Statistical Physics group in the Theoretical Division at Los Alamos National Laboratory where he investigated the transport and injection of spin-polarized electrons at magnet-semiconductor contacts.
Dr. Albrecht joined the Air Force Research Laboratory in 2002. His technical work there began in the Electron Devices Branch, where he conducted research in the areas of alloyed magnetic semiconductors (GaMnN), tunnel-diode injection structures for improving the RF modulation of bipolar-cascade lasers, strongly-coupled electromechanical strain analysis of wide-bandgap transistors and detectors, and the analysis of electromagnetic band structures and defects through Wannier function analysis. He subsequently became the Technical Advisor of the Aerospace Components and Technology Division at AFRL. As Technical Advisor, Dr. Albrecht evaluated and advised the intramural technical program comprised of five technology branches and numerous facilities that address a broad span of technologies. The technical areas include electronic and optoelectronic materials and devices, RF and optical characterization, highly integrated RF microsystems, and testbed demonstrations of subsystems. This group is well known for its pioneering development of RF-on-flex aperture technology, thermally-shunted HBTs, wide-bandgap transistor rapid prototyping and assessment, mixed-signal RF circuits, laser diode research, and advanced characterization techniques for on-wafer tests. Dr. Albrecht has served on the Sensors Directorate Technology Review Board which is responsible for vetting the technical program across a diverse set of technologies for involving device and component for RF and EO Sensing and Electronic Warfare applications.
Dr. Albrecht is the author of more than 50 technical papers and conference proceedings.